When to Use Photoresist Stripper？

PART 01 Techniques for Photoresist Removal

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• Dry Etch Process

One of the primary techniques for stripping photoresist is the dry etch process, which utilizes oxygen-based plasma. This method is particularly favored for highly intricate or densely packed electronic devices because it minimizes the risks of under-cutting and photoresist peeling.Despite its advantages, this technique is considerably more expensive than its alternatives.

• Wet Clean Process

Another prevalent technique is the wet clean process. This method involves the use of liquid chemicals to dissolve and strip away the photoresist. While cost-effective, it can pose challenges such as the potential for under-cutting, where the chemical solution erodes material beneath the photoresist, thereby compromising the integrity of the patterns.

As a part of fabrication process of a semiconductor wafer, a number of layers removal techniques are used to get rid of any unwanted layers from the surface of a substrate while trying not to introduce any contamination. Photoresist are light-sensitive organic materials which are applied during photo lithography process to form a patterned coating on a surface to protect the underlying inorganic layers during electronic manufacturing steps. The photoresist layer thus need to be removed in the final stage of a manufacturing process by a photoresist stripper. 

If you want to learn more, please visit our website Acetone.

Photoresist can be stripped away by two different techniques: One by applying a dry etch process using oxygen based plasma, and the other is to apply a wet clean process.  For very fine or highly dense electronic devices, dry etch process is the preferred method as problems such as under-cutting or photoresist peeling would not occur. However, a dry etch process is much more expansive compared to a wet etch.

Solexir is supplying three kinds of photoresist strippers which can create a wide range of selectivity for different lithography process. These three solutions can be summarized as
A.   Acidic solution, which is Oaky to be used in absence of any metal year
B.  Neutral Solution, which can be used for any process with sensitive layer to pH
C. Alkaline solution for stripping photoresist in high backed

The Benefit of these photoresist strippers can be summarized as follows.

1. High Potency
2. High thermal Stability
3. High Chemical Stability
4. High Water Solubility
5. High Wet-ability Power: 30 Dyn/Cm
6. Nonflammable
7. Wide cleaning applications for peeling different types of Photoresists off of underlaying layers

For more details please see the Solexir photoresist strippers in its product line.